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Bóthar Wangda, Sráid Ziyang, Contae Wuyi, Cathair Jinhua, Zhejiang Province, an tSín
Tagraíonn silicon epitaxy, epi, epitaxy, epitaxial d'fhás ciseal criostail leis an treo criostail céanna agus tiús criostail difriúil ar fhoshraith sileacain criostalach amháin. Tá gá le teicneolaíocht fáis eipiciúil chun comhpháirteanna scoite leathsheoltóra agus ciorcaid chomhtháite a mhonarú, toisc go bhfuil N-Type agus P-cineál san áireamh sna heisíontais atá i leathsheoltóirí. Trí mheascán de chineálacha éagsúla, léiríonn feistí leathsheoltóra feidhmeanna éagsúla.
Is féidir modh fáis epitaxy silicon a roinnt i gcéim gháis an gháis, in eipidít chéim leachtach (LPE), in eipidít chéim sholadach, úsáidtear modh fáis sil -leagan gaile ceimiceach go forleathan ar fud an domhain chun an sláine laitíse a chomhlíonadh.
Is é an chuideachta Iodálach LPE a dhéanann ionadaíocht ar threalamh epitaxial tipiciúil sileacain, a bhfuil pnitxial pnotic, cineál bairille pnotic, leathsheoltóra hy pnotic, iompróir sliseog agus mar sin de. Seo a leanas an léaráid scéimreach de sheomra imoibriúcháin eipidíteach Hy Pelector atá múnlaithe ag bairille. Is féidir le Vetek Semiconductor a chur ar fáil do Phelector Hy Pelector atá múnlaithe ag bairille. Tá cáilíocht na Sic atá brataithe le Pelector an -aibí. Cáilíocht atá comhionann le SGL; Ag an am céanna, is féidir le Vetek Semiconductor a chur ar fáil freisin cuasán cuasán cuas, grianchloch, clog Jar agus táirgí iomlána eile.
SCECTOR GRAFLITE SIC SOCECTOR DO EPI
Sonraí bairille brataithe SIC
CVD SIC SOCECTOR BREATHNÚ
LPE má tá tacar epi tacaíochta
Tráidire Epitaxial Silicon Monocrystalline SIC SIC
Tacaíocht brataithe SIC do LPE PE2061S
Tacaíocht rothlach graifít
Veteksemicon silicon epitaxy solutions are your strategic procurement choice for advanced semiconductor wafer processing, particularly in CMOS, power devices, and MEMS applications. As a key process in wafer engineering, silicon epitaxy (Si Epi) involves the precise deposition of a crystalline silicon layer on top of a polished silicon wafer, offering superior control of doping profiles, defect density, and layer thickness.
Veteksemicon provides epitaxy-ready susceptor parts and reactor components used in Epi CVD systems, supporting both atmospheric and reduced pressure processes. Our product lineup includes silicon epitaxy susceptors, carrier rings, and coated wafer holders, optimized for compatibility with tools from Applied Materials, ASM, and Tokyo Electron (TEL).
Silicon epitaxy plays a critical role in producing ultra-thin junctions, strained silicon layers, and high-voltage isolation structures. Our materials and parts are engineered for high-purity, uniform thermal distribution, and anti-contamination performance during n-type and p-type epitaxial growth.
Closely associated terms include epitaxial wafer, in-situ doping, epitaxy-ready SiC coatings, and epi reactor parts, which support the entire upstream and downstream process of silicon-based IC fabrication.
Discover more about Veteksemicon’s silicon epitaxy support solutions by visiting our product detail page or contacting us for technical consultation and part customization.
+86-579-87223657
Bóthar Wangda, Sráid Ziyang, Contae Wuyi, Cathair Jinhua, Zhejiang Province, an tSín
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